Low power method and system for signal slew rate control

ABSTRACT

An electronic device includes a first circuit grouping including a first set of drivers, the first circuit grouping configured to generate a first set of output signals corresponding to a first slew rate; and s second circuit grouping including a second set of drivers, the second circuit grouping configured to generate a second set of output signals corresponding to a second slew rate, wherein the first set of drivers correspond to one or more physical characteristics different than the second set of drivers for introducing different slew rates.

TECHNICAL FIELD

The disclosed embodiments relate to electronic devices, and, inparticular, to electronic devices with a method and system for low powersignal slew rate control.

BACKGROUND

Electronic devices systems (e.g., semiconductor devices) can utilize andgenerate various timing signals in performing a variety of differentfunctions/features. In some embodiments, the electronic devices canemploy memory devices to store and access information. The memorydevices can include volatile memory devices, non-volatile memorydevices, or a combination device. Memory devices, such as dynamicrandom-access memory (DRAM), can utilize electrical energy to store andaccess data. For example, the memory devices can include Double DataRate (DDR) RAM devices that implement DDR interfacing scheme forhigh-speed data transfer. However, existing schemes forgenerating/utilizing the timing signals can consume relatively largeamounts of power.

With technological advancements in other areas and increasingapplications, the market is continuously looking for faster, moreefficient, and smaller devices. For example, lowering power consumptioncan be one of the highest motivations in the DRAM market. To meet themarket demand, the semiconductor devices are being pushed to the limit.In view of the ever-increasing commercial competitive pressures, alongwith growing consumer expectations and the desire to differentiateproducts in the marketplace, it is increasingly desirable that answersbe found to these problems. Additionally, the need to reduce costs,improve efficiencies and performance, and meet competitive pressuresadds an even greater pressure to find answers to these problems.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram of an electronic device in accordance with anembodiment of the present technology.

FIG. 2 illustrates a block diagram of a signal output circuit inaccordance with an embodiment of the present technology.

FIG. 3 illustrates a block diagram of an output circuit in accordancewith an embodiment of the present technology.

FIG. 4 illustrates a block diagram of a further output circuit inaccordance with an embodiment of the present technology.

FIG. 5 illustrates an example output signal set in accordance with anembodiment of the present technology.

FIG. 6 illustrates a flow diagram illustrating an example method ofoperating an electronic device in accordance with an embodiment of thepresent technology.

FIG. 7 illustrates a flow diagram illustrating an example method ofmanufacturing an electronic device in accordance with an embodiment ofthe present technology.

FIG. 8 is a schematic view of a system that includes an electronicdevice in accordance with an embodiment of the present technology.

DETAILED DESCRIPTION

As described in greater detail below, the technology disclosed hereinrelates to electronic devices, systems with electronic devices, andrelated methods for controlling the integrity (e.g., a slew rate) ofoutput signals, such as for signals communicated from one or more memorydevices to a controller or vice versa. The electronic devices (e.g.,memory devices) can include staggered groups of output legs withdifferent physical/electrical traits (e.g., component sizes, such as fordrivers and/or capacitors, circuit lengths, component counts, etc.). Thestaggered groups of output legs can be used to generate phasedifferences in output signals (e.g., for a three-phase output signals).

The electronic devices can include a staggered scheme for differentstages for groups of output legs. After a data signal is clocked outwith a delay locked loop (DLL), the different stages can combine datawith strength information (e.g., output drive strength (ODS), on dietermination (ODT), read drive strength, etc.), such as for read cycle,enable/disable control, etc. The output legs can be grouped according tospeed/timing. For example, a faster grouping of the output legs can beused to define/control a turn-on timing of an output driver. A mediumgrouping of the output legs can be used to smooth out or shape the datatransition. A slower grouping of the output legs can be used to keep thecorrect strength information once the data signal is communicatedbetween devices.

The various groupings of the output legs can correspond to delays usedto control the slew rates in the signals output from the groupings. Theslew rate can be an amount of change in the voltage over the transitiontime, e.g., according to a DDR specification (e.g., 4V/ns to 9V/ns).Signal slew rates that fall outside of the specified limits/ranges areundesirable as they can degrade the device's performance in a system.Conversely, controlling the slew rates based on designing/controllingphysical traits of one or more components/aspects of the circuit pathcan provide reduced power consumption and improved performance. Insteadof using staggered delays to generate the phases (i.e., such as done insome existing designs), the electronic devices can use physical traits(e.g., gate drives and capacitive loads) in stages in the data path togenerate the phases. Based on eliminating the stagger delays, theelectronic devices can reduce the power consumption required to generatethe phases.

FIG. 1 is a block diagram of an electronic device (e.g., a semiconductormemory device 100, such as a DRAM device) in accordance with anembodiment of the present technology. The memory device 100 may includean array of memory cells, such as memory array 150. The memory array 150may include a plurality of banks (e.g., banks 0-15 in the example ofFIG. 1), and each bank may include a plurality of word lines (WL), aplurality of bit lines (BL), and a plurality of memory cells arranged atintersections of the word lines and the bit lines. Memory cells caninclude any one of a number of different memory media types, includingcapacitive, magnetoresistive, ferroelectric, phase change, or the like.The selection of a word line WL may be performed by a row decoder 140,and the selection of a bit line BL may be performed by a column decoder145. Sense amplifiers (SAMP) may be provided for corresponding bit linesBL and connected to at least one respective local I/O line pair(LIOT/B), which may in turn be coupled to at least respective one mainI/O line pair (MIOT/B), via transfer gates (TG), which can function asswitches. The memory array 150 may also include plate lines andcorresponding circuitry for managing their operation.

The memory device 100 may employ a plurality of external terminals thatinclude command and address terminals coupled to a command bus and anaddress bus to receive command signals CMD and address signals ADDR,respectively. The memory device may further include a chip selectterminal to receive a chip select signal CS, clock terminals to receiveclock signals CK and CKF, data clock terminals to receive data clocksignals WCK and WCKF, data terminals DQ, RDQS, DBI, and DMI, powersupply terminals VDD, VSS, VDDQ, and VSSQ.

The command terminals and address terminals may be supplied with anaddress signal and a bank address signal from outside. The addresssignal and the bank address signal supplied to the address terminals canbe transferred, via a command/address input circuit 105, to an addressdecoder 110. The address decoder 110 can receive the address signals andsupply a decoded row address signal (XADD) to the row decoder 140, and adecoded column address signal (YADD) to the column decoder 145. Theaddress decoder 110 can also receive the bank address signal (BADD) andsupply the bank address signal to both the row decoder 140 and thecolumn decoder 145.

The command and address terminals may be supplied with command signalsCMD, address signals ADDR, and chip selection signals CS, from a memorycontroller. The command signals may represent various memory commandsfrom the memory controller (e.g., including access commands, which caninclude read commands and write commands). The select signal CS may beused to select the memory device 100 to respond to commands andaddresses provided to the command and address terminals. When an activeCS signal is provided to the memory device 100, the commands andaddresses can be decoded and memory operations can be performed. Thecommand signals CMD may be provided as internal command signals ICMD toa command decoder 115 via the command/address input circuit 105. Thecommand decoder 115 may include circuits to decode the internal commandsignals ICMD to generate various internal signals and commands forperforming memory operations, for example, a row command signal toselect a word line and a column command signal to select a bit line. Theinternal command signals can also include output and input activationcommands, such as clocked command CMDCK. The command decoder 115 mayfurther include one or more registers 117 for tracking various counts orvalues (e.g., counts of refresh commands received by the memory device100 or self-refresh operations performed by the memory device 100).

When a read command is issued and a row address and a column address aretimely supplied with the read command, read data can be read from memorycells in the memory array 150 designated by these row address and columnaddress. The read command may be received by the command decoder 115,which can provide internal commands to input/output circuit 160 so thatread data can be output from the data terminals DQ, RDQS, DBI, and DMIvia read/write amplifiers 155 and the input/output circuit 160 accordingto the RDQS clock signals. The read data may be provided at a timedefined by read latency information RL that can be programmed in thememory device 100, for example, in a mode register (not shown in FIG.1). The read latency information RL can be defined in terms of clockcycles of the CK clock signal. For example, the read latency informationRL can be a number of clock cycles of the CK signal after the readcommand is received by the memory device 100 when the associated readdata is provided.

When a write command is issued and a row address and a column addressare timely supplied with the command, write data can be supplied to thedata terminals DQ, DBI, and DMI according to the WCK and WCKF clocksignals. The write command may be received by the command decoder 115,which can provide internal commands to the input/output circuit 160 sothat the write data can be received by data receivers in theinput/output circuit 160, and supplied via the input/output circuit 160and the read/write amplifiers 155 to the memory array 150. The writedata may be written in the memory cell designated by the row address andthe column address. The write data may be provided to the data terminalsat a time that is defined by write latency WL information. The writelatency WL information can be programmed in the memory device 100, forexample, in the mode register (not shown in FIG. 1). The write latencyWL information can be defined in terms of clock cycles of the CK clocksignal. For example, the write latency information WL can be a number ofclock cycles of the CK signal after the write command is received by thememory device 100 when the associated write data is received.

The power supply terminals may be supplied with power supply potentialsVDD and VSS. These power supply potentials VDD and VSS can be suppliedto an internal voltage generator circuit 170. The internal voltagegenerator circuit 170 can generate various internal potentials VPP, VOD,VARY, VPERI, and the like based on the power supply potentials VDD andVSS. The internal potential VPP can be used in the row decoder 140, theinternal potentials VOD and VARY can be used in the sense amplifiersincluded in the memory array 150, and the internal potential VPERI canbe used in many other circuit blocks.

The power supply terminal may also be supplied with power supplypotential VDDQ. The power supply potential VDDQ can be supplied to theinput/output circuit 160 together with the power supply potential VSS.The power supply potential VDDQ can be the same potential as the powersupply potential VDD in an embodiment of the present technology. Thepower supply potential VDDQ can be a different potential from the powersupply potential VDD in another embodiment of the present technology.However, the dedicated power supply potential VDDQ can be used for theinput/output circuit 160 so that power supply noise generated by theinput/output circuit 160 does not propagate to the other circuit blocks.

The clock terminals and data clock terminals may be supplied withexternal clock signals and complementary external clock signals. Theexternal clock signals CK, CKF, WCK, WCKF can be supplied to a clockinput circuit 120. The CK and CKF signals can be complementary, and theWCK and WCKF signals can also be complementary. Complementary clocksignals can have opposite clock levels and transition between theopposite clock levels at the same time. For example, when a clock signalis at a low clock level a complementary clock signal is at a high level,and when the clock signal is at a high clock level the complementaryclock signal is at a low clock level. Moreover, when the clock signaltransitions from the low clock level to the high clock level thecomplementary clock signal transitions from the high clock level to thelow clock level, and when the clock signal transitions from the highclock level to the low clock level the complementary clock signaltransitions from the low clock level to the high clock level.

Input buffers included in the clock input circuit 120 can receive theexternal clock signals. For example, when enabled by a CKE signal fromthe command decoder 115, an input buffer can receive the CK and CKFsignals and the WCK and WCKF signals. The clock input circuit 120 canreceive the external clock signals to generate internal clock signalsICLK. The internal clock signals ICLK can be supplied to an internalclock circuit 130. The internal clock circuit 130 can provide variousphase and frequency controlled internal clock signal based on thereceived internal clock signals ICLK and a clock enable signal CKE fromthe command/address input circuit 105. For example, the internal clockcircuit 130 can include a clock path (not shown in FIG. 1) that receivesthe internal clock signal ICLK and provides various clock signals to thecommand decoder 115. The internal clock circuit 130 can further provideinput/output (IO) clock signals. The IO clock signals can be supplied tothe input/output circuit 160 and can be used as a timing signal fordetermining an output timing of read data and the input timing of writedata. The IO clock signals can be provided at multiple clock frequenciesso that data can be output from and input to the memory device 100 atdifferent data rates. A higher clock frequency may be desirable whenhigh memory speed is desired. A lower clock frequency may be desirablewhen lower power consumption is desired. The internal clock signals ICLKcan also be supplied to a timing generator 135 and thus various internalclock signals can be generated.

The memory device 100 can be connected to any one of a number ofelectronic devices capable of utilizing memory for the temporary orpersistent storage of information, or a component thereof. For example,a host device of memory device 100 may be a computing device such as adesktop or portable computer, a server, a hand-held device (e.g., amobile phone, a tablet, a digital reader, a digital media player), orsome component thereof (e.g., a central processing unit, a co-processor,a dedicated memory controller, etc.). The host device may be anetworking device (e.g., a switch, a router, etc.) or a recorder ofdigital images, audio and/or video, a vehicle, an appliance, a toy, orany one of a number of other products. In one embodiment, the hostdevice may be connected directly to memory device 100, although in otherembodiments, the host device may be indirectly connected to memorydevice (e.g., over a networked connection or through intermediarydevices).

The electronic device (e.g., the memory device 100 and/or the hostdevice) can include a signal output/generator circuit (e.g., theinput/output circuit 160) configured to control the integrity (e.g., aslew rate) of output signals. For example, the input/output circuit 160can include a staggered scheme for different stages for groups of outputlegs. The output legs can be configured to have different outputspeeds/timing based on different physical/electrical traits (e.g.,component sizes, such as for drivers and/or capacitors, circuit length,component count, etc.) of circuit components therein.

FIG. 2 illustrates a block diagram of a signal output circuit 200 inaccordance with an embodiment of the present technology. The signaloutput circuit 200 can include the input/output circuit 160 of FIG. 1 ora portion thereof. In some embodiments, the signal output circuit 200can be coupled to a DLL. After the data signal is clocked out with thedelay locked loop (DLL), the different stages can combine data withstrength information (e.g., output drive strength (ODS), on dietermination (ODT), read drive strength, etc.), such as for read cycle,enable/disable control, etc. The resulting signal can be routed to oneor more output pads.

The signal output circuit 200 can include a first pre-driver 202, asecond pre-driver 204, and an output driver 206, etc. each configured tocontrol slew rates in the output signals while combining the data withstrength information. The first pre-driver 202, the second pre-driver204, the output driver 206, etc. can include multiple circuit stages(e.g., a first stage 212, a second stage 214, a third stage 216, afourth stage 218, etc. For example, the first stage 212 can beconfigured to control activation of a number of circuit legs ingenerating the output signals. The second stage 214 (e.g., ZQ drivers)can be configured to generate the drive strength and the ODT strengthfor the output signals.

The third stage 216 can be configured to control a drive strength ineach of the activated circuit legs. The fourth stage 218 can beconfigured to generate the output signals (e.g., three signals withdifferent phase/slew rates) using the circuit legs and the drivestrength as set by the first stage 212 and the third stage 216. In someembodiments, the third stage 216, the fourth stage 218, etc. can includemultiple (e.g., two, three, four, five, six, seven, or more) parallelcircuit modules. Each of the circuit module can be a circuit leg.

The signal output circuit 200 can introduce relatively small amounts ofslew rates across the first two or three stages. The majority of thedifference in the slew rate can be controlled based on the circuit pathand/or physical/electrical characteristic of components in the circuitpath at the third stage 216 and/or the fourth stage 218. Accordingly,the overall signal routing resulting from the first three stages cancontrol the slew rate of the output signals. In some embodiments, thefirst stage 212 can include three drivers, the second stage 214 and/orthe third stage 216 can include four drivers, and the fourth stage 218can include seven legs with each leg including variable strengthsettings/circuits.

The signal output circuit 200 can further include multiple parallelcircuit paths. For example, the signal output circuit 200 can include afirst circuit path 222 and a second circuit path 224. The first circuitpath 222 can be configured to process positive data input signals, andthe second circuit path 224 can be configured to process negative datainput signals. The first pre-driver 202, the second pre-driver 204, theoutput driver 206, etc. can be divided/separated/configured according tothe multiple parallel circuit paths (e.g., the first circuit path 222and the second circuit path 224).

FIG. 3 illustrates a block diagram of an output circuit (e.g., the firstpre-driver 202) in accordance with an embodiment of the presenttechnology. The first pre-driver 202 can include a set of multiple(e.g., four) drivers in the first stage 212 and/or the second stage 214.For example, the first stage 212 can include a first-stage first driver302, a first-stage second driver 304, a first-stage third driver 306, afirst-stage fourth driver 308, etc. Also, the second stage 214 caninclude a second-stage first driver 352, a second-stage second driver354, a second-stage third driver 356, a second-stage fourth driver 358,etc.

In some embodiments, the first-stage drivers can receive a first input(In<0>), a second input (In<1>), a third input (In<3>), etc. Forexample, the first-stage first driver 302 and the first-stage seconddriver 304 can receive the first input, the third driver 306 can receivethe second input, and the fourth driver 308 can receive the third input.In some embodiments, the multiple drivers in the first stage can eachreceive its own enable signal (e.g., Enable<0> at the first driver,Enable<1> at the second driver, etc.). Based on the input signals andthe enable signals, each of the drivers can generate an output signal.For example, the first-stage first driver 302 can generate a firstoutput (Dat<0>), the first-stage second driver 304 can generate a secondoutput (Dat<1>), the first-stage third driver 306 can generate a thirdoutput (Dat<2>), the first-stage fourth driver 308 can generate a fourthoutput (Dat<3>), etc.

Each of the first-stage drivers (e.g., logic gates, such as NAND gates)can be configured to have a physical trait (e.g., a driver size, such asspace/area on the silicon/die occupied by the driver) that correspond toa different slew rate. For example, the first-stage first driver 302 cancorrespond to a first-stage first size 312, the first-stage seconddriver 304 can correspond to a first-stage second size 314, thefirst-stage third driver 306 can correspond to a first-stage third size316, the first-stage fourth driver 308 can correspond to a first-stagefourth size 318, etc.

The various drivers of the first stage can have different relative sizesthat correspond to different slew rates. In some embodiments, thefirst-stage fourth size 318 (e.g., fastest slew rate) can be greaterthan the first-stage third size 316, the first-stage third size 316 canbe greater than the first-stage second size 314, etc. with thefirst-stage first size 312 (e.g., slowest slew rate) being the smallestamong the drivers. In some embodiments, the first-stage second size 314can be double (e.g. 2×) the first-stage first size 312 (e.g., 1×), andthe first-stage third size 316 and/or the first-stage fourth size 318can be triple the (e.g. 3×) the first-stage first size 312. In someembodiments, the driver sizes can be controlled according to the outputcircuit legs (e.g., seven output legs corresponding to the third andfourth stage). The driver size for a single/base output leg (e.g., asingle driver grouping that corresponds to a fast slew rate in theoutput) can correspond to a minimum size (e.g., the first-stage firstsize 312 or 1×). Two of the additional fast slew rate legs cancorrespond to driver sizes that are twice (e.g., 2×) the minimum size.Two of the slower slew rate legs and two of the medium slew rate legscan correspond to 1.5 times (e.g., 1.5×) the minimum driver size. Theequivalent driver size for the slower/medium slew rates can be based oncombining the drivers in the first stage, such as by having the thirdand fourth drivers connected in parallel.

The various drivers of the first stage can have different relativecapacitance values (e.g., gate capacitance and/or additional capacitors)that correspond to different slew rates. The capacitance values, alongwith circuit resistance values, can generally have a direct relationshipwith time/slew rate (e.g., t=RC, where R represents the driver size).For example, smaller R (e.g., strong driver) and/or smaller C cancorrespond to the faster slew rates; average R and C can correspond tothe medium slew rates; and greater R (e.g., weaker driver) and/orgreater C can correspond to the slower slew rates.

In some embodiments, the first driver (e.g., a faster driver) cancorrespond to the minimum capacitance value (e.g., 1C₁) with the otherdrivers (e.g., medium and slower drivers) having twice the capacitancevalue of the minimum. In some embodiments, the capacitor sizes can alsobe controlled according to the output circuit legs (e.g., seven outputlegs corresponding to the third and fourth stage). The capacitor sizefor a single/base output leg can correspond to a minimum capacitance(e.g., the first-stage first driver 302 or 1C₁). Two of the additionalfast slew rate legs can correspond to capacitances that are twice (e.g.,2C₁) the minimum size. Two of the slower slew rate legs and two of themedium slew rate legs can correspond to quadruple (e.g., 4C₁) theminimum capacitance.

The difference in the driver sizes can generate different slew rates forthe generated outputs. For example, the first output, the second output,the third output, the fourth output, etc. can have different slew rates(e.g., the first output being the slowest and the fourth output beingthe fastest) according to the driver size differences. In someembodiments, the third output and the fourth output can be electricallycoupled together.

The resulting outputs can be provided to the second stage 214. Forexample, the second-stage first driver 352 can receive the first output,the second-stage second driver 354 can receive the second output, thesecond-stage third driver 356 can receive the third output, thesecond-stage fourth driver 258 can receive the fourth output, etc. Insome embodiments, the multiple drivers in the second stage can eachreceive its own enable signal (e.g., Enable2<0> at the first driver,Enable2<1> at the second driver, etc.). In some embodiments, thesecond-stage third driver 366 and the second-stage fourth driver 368 canbe controlled by the same enable signal (e.g., Enable2<2>). Based on theinput signals and the enable signals, each of the drivers can generate asecond stage output (e.g., first pre-driver output) signal. For example,the second-stage first driver 352 can generate a first output (Drv<0>),the second-stage second driver 354 can generate a second output(Drv<1>), the second-stage third driver 356 can generate a third output(Drv<2>), the second-stage fourth driver 358 can generate a fourthoutput (Drv<3>), etc. Outputs of the second stage can be provided asinput to the third stage.

Similar to the first stage 212, each of the second stage drivers (e.g.,logic gates, such as NAND or NOR gates or inverters) can be configuredto have a physical trait (e.g., a driver size) that correspond to adifferent slew rate. For example, the second-stage first driver 302 cancorrespond to a second-stage first size 362, the second-stage seconddriver 354 can correspond to a second-stage second size 364, thesecond-stage third driver 356 can correspond to a second-stage thirdsize 366, the second-stage fourth driver 358 can correspond to asecond-stage fourth size 368, etc.

The various drivers in the second stage can also have different relativesizes that correspond to different slew rates. In some embodiments, thesecond-stage fourth size 368 (e.g., corresponding to faster slew rate)can be same as/equal to the second-stage second size 364 (e.g.,corresponding to faster slew rate). The second-stage fourth size 368and/or the second-stage second size 364 can be double the size of thesecond-stage first size 362 (e.g., corresponding to slower slew rate).The second-stage third size 366 (e.g., 3Y) can be between thesecond-stage first size 362 (e.g., 2Y) and the second-stage fourth size368 (e.g., 4Y) and/or the second-stage second size 364 (e.g., 4Y). Insome embodiments, the second-stage first size 362 can be same as/equalto the first-stage second size 314. In some embodiments, such as for theseven output circuit legs, the driver size for a single/base output legcan correspond to a minimum size (e.g., 1Y, where X=Y in someembodiments). Two of the additional faster-rate legs and the twomedium-rate legs can correspond to driver sizes that are twice (e.g.,2Y) the minimum size. Two of the slower-rate legs can correspond to 1.5times (e.g., 1.5Y) the minimum driver size.

The various drivers of the second stage can have different relativecapacitance values that correspond to different slew rates. In someembodiments, the first driver (e.g., a faster driver) can correspond tothe minimum capacitance value (e.g., 1C₂), with the medium driver havingcapacitance 1.5 times of the minimum and the slower driver having doublethe capacitance of the minimum. In some embodiments, such as for theseven output circuit legs, the capacitor size for a single/base outputleg can correspond to a minimum capacitance (e.g., the first-stage firstdriver 302 or 1C₂). Two of the additional fast slew rate legs cancorrespond to capacitances that are twice (e.g., 2C₂) the minimum size.Two of the slower slew rate legs and two of the medium slew rate legscan correspond to 2.5 times (e.g., 2.5C₂) the minimum capacitance. Theminimum capacitance value of the second stage can be equal to ordifferent from that of the first stage.

FIG. 4 illustrates a block diagram of a further output circuit (e.g.,the second pre-driver 204 and/or the output driver 206) in accordancewith an embodiment of the present technology. The second pre-driver 204can include a set of multiple (e.g., two or more) circuit sets/modules,a set of drivers (e.g., two or more), etc. For example, the secondpre-driver 204 can include multiple circuit sets configured fordifferent slew rates or speeds. Also, the second pre-driver 204 caninclude drivers that correspond to the circuit sets.

In some embodiments, the second pre-driver 204 (e.g., the third stagecircuit 216 of FIG. 2) can include three or four circuits sets forimplementing three phases (e.g., three different slew rates thatcorrespond to faster, slower, and medium rate). The second pre-driver204 can also include seven drivers that are grouped into three sets oftwo driver groupings and a set of a single driver grouping. For example,the second pre-driver 204 can include a third-stage first set 401, athird-stage fast set 402, a third-stage slow set 403, and a third-stagemedium set 404. The third-stage first set 401 can be the single driverset that includes a third-stage base driver group 412 (e.g., a singlegrouping of fastest/additional drivers used to adjust the slew speed).The remaining circuit sets can include two driver groupings each, suchthat the third-stage fast set 402 includes a third-stage first fastgrouping 422 and a third-stage second fast grouping 424; the third-stageslow set 403 includes a third-stage first slow grouping 432 and athird-stage second slow grouping 434; and the third-stage medium set 404includes a third-stage first medium grouping 442 and a third-stagesecond medium grouping 444.

The drivers in the third stage can include one or more drivers and/orcapacitors that each have a physical trait (e.g., a driver/gate size,such as space/area on the silicon/die occupied by the driver, acapacitance value, such as for gate capacitance or additional capacitorstructures, gate loading, etc.) that correspond to a different slewrate. For example, the third-stage initial driver 412 can correspond toan initial driver physical profile 416. Also, the third-stage first fastgrouping 422 and/or the third-stage second fast grouping 424 cancorrespond a fast driver physical profile 426, the third-stage firstslow grouping 432 and/or the third-stage second slow grouping 434 cancorrespond to a slow driver physical profile 436, and the third-stagefirst medium grouping 442 and/or the third-stage second medium grouping444 can correspond to a medium driver physical profile 446.

In some embodiments, as an example, each of the driver groupings caninclude two drivers (e.g., one driver for stage 3A and one driver forstage 3B). The relative driver sizes of the example circuit may be asdescribed in Table 1 below.

TABLE 1 Stage 3A Stage 3B Fast Driver Size 1Z_(A) or 2Z_(A) 1Z_(B) or2Z_(B) Medium Driver Size (½)Z_(A) (½)Z_(B) Slower Driver Size (½)Z_(A)(½)Z_(B)Further, of the example circuit may be as described in Table 2 below.

TABLE 2 Stage 3A Stage 3B Fast Capacitance Value 0.5C_(3A) or 1C_(3A)1C₃ or 2C_(3B) Medium Capacitance Value 1C_(3A) 2C_(3B) SlowerCapacitance Value 1.5C_(3A) 2C_(3B)

Specifically for the seven output legs, with each the driver groupingsincluding two drivers (e.g., one driver for stage 3A and one driver forstage 3B), the relative driver sizes of the example circuit may be asdescribed in Table 3 below.

TABLE 3 Stage 3A Stage 3B Single Base Grouping 1Z_(A) 1Z_(B) FastGroupings 2Z_(A) 1.5Z_(B) Medium Groupings 1Z_(A) 1.5Z_(B) SlowGroupings 1.5Z_(A) 1.5Z_(B)Further, of the example circuit may be as described in Table 4 below.

TABLE 4 Stage 3A Stage 3B Single Base Grouping 1C_(3A) 1C_(3B) FastGroupings 2C_(3A) 2C_(3B) Medium Groupings 2C_(3A) 2C_(3B) SlowGroupings 2.5C_(3A) 2C_(3B)

In some embodiments, the minimum capacitance value and/or the minimumdriver size within the grouping (e.g., across stage 3A and stage 3B) canbe equal (e.g., Z_(A)=Z_(B) and/or C_(3A)=C_(3B)). In some embodiments,the minimum capacitance value and/or the minimum driver size can beequal to that of the first stage (e.g., X=Z and/or C₃=C₁) and/or thesecond stage (e.g., Y=Z and or C₃=C₂).

The electronic device (e.g., the memory device 100 of FIG. 1) can useone or more of the circuit sets (e.g., the faster set, the slower set,the medium set, and/or the extra set) and/or the driver combinationstherein to control the slew rates of the output signals. For example,the first stage can select the specific legs/circuit sets (e.g., thenumber of sets, specific combination of the sets, etc.) in the thirdstage that is used to generate the output signals. Also, the selectedset(s) in the third stage can control specific paths/fingers in thefourth stage for controlling the strength information (e.g., the ODS orODT) of the generated output signal.

Similar to the second pre-driver 204, the output driver 206 can includea set of multiple (e.g., two, three, four, or more) circuitsets/modules, a set of drivers (e.g., 2 or more, such as a seven-driverimplementation illustrated in FIG. 4), etc. The fourth stage circuitsets/drivers can correspond to the phase/slew rategroupings/configurations of the third stage. For example, the fourthstage circuit 218 can include the three or four circuits sets forimplementing three phases (e.g., three different slew rates thatcorrespond to faster, slower, and medium rate). Further, the secondpre-driver 204 can include multiple circuit sets configured fordifferent slew rates or speeds (e.g., a fourth-stage first set 451, afourth-stage fast set 452, a fourth-stage slow set 453, a fourth-stagemedium set 454, etc.).

The circuit sets of the fourth stage can receive outputs (e.g.Pre0-Pre6) of corresponding circuit sets from the third stage. Forexample, the fourth-stage first set 451 can receive the output (e.g.,Pre0) of the third-stage first set 401. Similarly, the fourth-stage fastset 452 can receive (e.g., Pre1 and/or Pre2) from the third-stage fastset 402, the fourth-stage slow set 453 from the third-stage slow set 403(e.g., Pre3 and/or Pre4), the fourth-stage medium set 454 from thethird-stage medium set 404 (e.g., Pre5 and/or Pre6), etc. In someembodiments, each leg can have a resistance of 240 ohms. The totalresistance of the fourth stage can correspond to a ratio between theresistance of each leg and the number of activated legs. For example,since the circuit legs are in parallel, 40 ohms can require six legsresulting from the two fast, two slow, and two medium circuit legs.Also, 60 ohms can require two fast and two medium circuit legs.

Each set of drivers (e.g., each leg) can include a set of internaldrivers and/or circuit paths configured to provide variable amount ofdrive strength for the output signal. For example, each leg can includea set of parallel circuit paths, with each circuit path including one ormore gates that control a voltage/current contribution in generating theoutput signal. Also, each of the gates can be configured to have aphysical characteristic (e.g., a size, a gate loading, a capacitancevalue, etc.) that is designed contribute a specific amount of delay inthe resulting slew rate of the generated signal.

As discussed above, the first pre-driver 202 can process signals thatcorrespond to all circuit legs and, in some embodiments,control/activate signal routes (e.g., particular legs). The drivergroupings in the second pre-driver 204 and the output driver 206 cancorrespond to the different slew rates. Faster grouping of output legsin the second pre-driver 204 can be used to define/control a turn-ontiming of the output driver. Medium grouping of the output legs can beused to smooth out or shape the data transition. Slower grouping ofoutput legs can be used to keep the correct strength once the datasignal is communicated between devices.

FIG. 5 illustrates an example output signal set in accordance with anembodiment of the present technology. The output signal set canillustrate slew rates in signals after different stages in theelectronic device (e.g., the memory device 100 of FIG. 1, such as a DDR4DRAM device). For example, FIG. 5 can illustrate slewed signals (e.g., afirst slewed signal 504 represented by a dashed line and a second slewedsignal 506 represented by a dotted line) in relation to a base or inputsignal 502 (e.g., signal represented by a solid line) at three differentpoints in the signal output circuit 200 of FIG. 2.

An initial output set 512 can illustrate the signals after the firstpre-driver 202 of FIG. 2. A pre-driven set 514 can illustrate thesignals after the second pre-driver 204 of FIG. 2. An output set canillustrate the signals generated after the output driver 206 of FIG. 2.As shown, the first pre-driver 202 can cause a relatively small phaseshift or delay for the first slewed signal 504 and the second slewedsignal 506. The second pre-driver 204 and/or the output driver 206 cancause a larger phase shift or delay.

FIG. 6 illustrates a flow diagram illustrating an example method 600 ofoperating an electronic device (e.g., the memory device 100 of FIG. 1 orthe signal output circuit 200 of FIG. 2 therein) in accordance with anembodiment of the present technology. The example method 600 cancorrespond to the signal diagram illustrated in FIG. 5. The examplemethod 600 can be for introducing different slew rates based onselecting and/or routing specific circuit paths, and relying on thephysical characteristic of the circuit paths to introduce/cause thedelay/phase shifts for the slew rates.

At box 602, the memory device 100 can select circuit paths forgenerating output signals. The memory device 100 can select the circuitpaths for generating output signals corresponding to different slewrates. For example, the memory device 100 can select different circuitgroupings (e.g., fast, slow, medium, etc.) for generating a 3-phaseoutput signal. The memory device 100 can select correspondingcombination of drivers (e.g., a first combination of fast-speed set ofdrivers, a second combination of slow-speed set of drivers, a thirdcombination for a medium-speed set of drivers, etc.) across the firstpre-driver 202 of FIG. 2, the second pre-driver 204 of FIG. 2, theoutput driver 206 of FIG. 2, etc.

At box 604, the memory device 100 can generate output signals (e.g.,outputs from the signal output circuit 200) using the selected circuits.For example, the memory device can generate the first output signal(e.g., corresponding to a first slew rate) using the first circuitgrouping, the second output signal (e.g., corresponding to a second slewrate) using the second circuit grouping, the third output signal (e.g.,corresponding to a third slew rate) using the third circuit grouping,etc.

At box 622, the memory device 100 can generate output signals based onpropagating the input signals (e.g., In<0-2>) through theselected/established circuit groupings (e.g., fast grouping, slowgrouping, medium grouping, etc.). For example, at block 642, the memorydevice 100 can generate the first pre-driver outputs using the firstpre-driver 202 (e.g., the first stage circuit 212 of FIG. 2 and/or thesecond stage circuit 214 of FIG. 2). The In<0-2> input signals canpropagate through the driver groupings (e.g., the first driver 302 ofFIG. 3, the second driver 304 of FIG. 3, the third driver 306 of FIG. 3,the fourth driver 308 of FIG. 3, etc.) in the first stage 212 togenerate the Dat<0-3> internal signals. Subsequently, the Dat<0-3>internal signals can propagate through the driver groupings (e.g., thefirst driver 352 of FIG. 3, the second driver 354 of FIG. 3, the thirddriver 356 of FIG. 3, the fourth driver 358 of FIG. 3, etc.) to generatethe Drv<0-3> internal signals. In some embodiments, the input signals,the internal signals, the corresponding enable signals, thecorresponding driver groups, etc. can correspond to different slew rateor delay speeds (e.g., fast, medium, slow slew rates). As such, thememory device 100 can use the first pre-driver 202 to select the circuitpath (e.g., the circuit legs or the drivers in stage 3 and/or stage 4)and initially drive the signals.

Also, at block 644, the memory device 100 can generate the secondpre-driver outputs using the second pre-driver 204 (e.g., the thirdstage circuit 216 of FIG. 2). The Drv<0-3> internal signals canpropagate through the driver groupings (e.g., the seven drivers/circuitlegs grouped into three or more sets) in the third stage 216 to generatethe Pre<0-6> internal signals. The generated internal signals cancorrespond to different slew rates that is associated with the physicalcharacteristics (e.g., the driver size, the gate loading, thecapacitance level, etc.) of the generating circuit.

At block 646, the memory device 100 can generate the outputs of thesignal output circuit 200 using the output driver 206 (e.g., the fourthstage circuit 218 of FIG. 2). The Pre<0-6> internal signals canpropagate through the driver groupings (e.g., the seven drivers/circuitlegs grouped into three or more sets) and the internal circuit paths inthe fourth stage circuit 218. The generated output signals cancorrespond to the different slew rates that correspond to the physicalcharacteristics of the driver circuit and the drive strength thatcorrespond to the internal circuit paths. For example, one of the outputsignals can be generated using the fast drivers, and as a result, have afast slew rate associated with the physical characteristics of the fastdrivers. Similarly, the slow drivers can generate slower output signalsand the medium drivers can generate output signals with slew rates inbetween the faster signal and the slower signal, all based on thephysical characteristics of the generating drivers. In some embodiments,other than the different physical characteristics, the different circuitpaths/drivers can include same type of circuit components and samesequence/connections.

The use of circuit physical characteristics to generate the differentslew rates provides improved performance and reduced power consumptionsince the configuration splits/routes the signals rather than repeatingthem throughout the circuit. Also, for DDR4 implementations, the relaxedtiming restrictions (e.g., in comparison to DDR3) can allow for a widerwindow in controlling the slew rates. As such, controlling/implementingthe slew rate can be done using the physical characteristics and withoutany specific circuits/control components. As such, the overallcomplexity and the total number of required components for the signalgenerator circuit can be reduced, thereby increasing themanufacturability and/or the circuit footprint.

Further, the use of circuit physical characteristics can reduce or eveneliminate the need for any stagger delays in generating the differentslew rates. As such, using the physical characteristics to generate thephases can provide improved efficiency and reduced the circuitfootprint/size based on eliminating/reducing the stagger delays.Moreover, the reduction/elimination of the stagger delays can provideimprovements in speed timings, such as by shortening access times. Thereduction in the number and/or size devices can lead to the reduction inpower consumption, which can further lead to improvement in reliabilityand lifetime of the electronic device. The use of circuit physicalcharacteristics can also reduce the dependency/correlation to the PVTvariations, which can improve high speed or high frequency operations ofthe electronic device.

Also, the use of circuit physical characteristics can be leveragedsimplify the control and data, and eliminate or reduce test modes in thepath. This can remove complexities in stack devices, such as for testmode signal on top of data used to adjust the propagation delay, andfurther reduce gate capacitive loading over all fourth paths (e.g., thesingle driver grouping path, the two fast driver groupings, the twomiddle driver groupings, the two slower driver groupings) of four stagesof pull-up/pull-down devices, such as for a total of 32 gate reductionfor each data (DQ).

FIG. 7 illustrates a flow diagram illustrating an example method 700 ofmanufacturing an electronic device (e.g., the memory device 100 of FIG.1 or the signal output circuit 200 of FIG. 2 therein) in accordance withan embodiment of the present technology. The example method 700 can befor configuring circuits with selectable routes, different physicalcharacteristics, etc., such that natural propagation of signals throughspecific paths can introduced designated slew rates.

At block 702, the method 700 can include providing the first pre-driver202 of FIG. 2 configured to generate a set of data signals (e.g.,Drv<0-3>) for initially driving the output signals. Providing the firstpre-driver 202 can include providing the drivers configured to processthe input signals (e.g., In<0-2>) for different circuit/driver groupings(e.g., the faster set, the medium/in between set, the slower set, etc.).For example, providing the first pre-driver 202 can include providingthe first driver 302, the second driver 304, the third driver 306, thefourth driver 308, etc. of FIG. 3 for the first stage 212 of FIG. 2; thefirst driver 352, the second driver 354, the third driver 356, thefourth driver 358, etc. of FIG. 3 for the second stage 214 of FIG. 2;etc.

At block 704, the method 700 can include providing the second pre-driver204 of FIG. 2 configured to route the set of data signals (e.g., outputsof the first pre-driver 202) through a set of circuit legs (e.g., driversets) for controlling the slew rates of the signals. For example,providing the second pre-driver 204 can include providing at least twosets of drivers or circuit groupings, such as at block 712. Thedifferent driver sets/circuit groupings can have components withdifferent physical characteristics that produce different slew rates inthe generated signals. In some embodiments, the sets/groupings caninclude a faster set of drivers for faster slew rate, a slower set ofdrivers for slower slew rate, a medium set of drivers for slew ratesbetween the faster and slower rates, etc.

At block 706, the method 700 can include providing the output driver 206of FIG. 2 configured to generate the output signals according to the setof circuit legs/driver sets. For example, providing the output driver206 can include providing at least two sets of drivers/output legs thateach correspond to a driver/circuit set of the second pre-driver 204,such as at block 722. Further, each of the drivers/output legs in theoutput driver 206 can include a set of signal paths configured toprovide a drive magnitude in the output signals. The output driver 206can engage the output leg and the signal paths according to thepreceding circuits (e.g., the first pre-driver 202 and/or the secondpre-driver 204) and/or control/enable signals.

The provided drivers, such as for the first pre-driver 202, the secondpre-driver 204, the output driver 206, etc., can be grouped into two ormore groups. The groupings can be based on circuit/component physicalcharacteristics and the corresponding slew rates. For example, thedrivers/circuits in the first pre-driver 202, the second pre-driver 204,the output driver 206, etc. can be grouped to generate a first/fasteroutput that corresponds to a faster slew rate, a second/slower outputthat corresponds to a slower slew rate, a third/medium output thatcorresponds to a medium slew rate that is between the faster and theslower slew rates. In some embodiments, the circuit/driver groupings caninclude same component types, same connections/sequence, etc. Thedifferent groupings can differentiate from each other based on thedifferent physical characteristics of the circuit/components.

In some embodiments, providing the driver/circuit, such as for blocks702-706, can include attaching the circuit components to a substrate, abase, a frame, a preceding circuit (e.g., DLL), etc. In someembodiments, providing the driver/circuit can include forming thecorresponding driver/circuit/component. For example, providing thedriver/circuit can include semiconductor or wafer-level processes (e.g.,depositing, etching, planarization, doping, etc.) used to form thecircuits/semiconductor devices.

FIG. 8 is a schematic view of a system that includes a memory device inaccordance with embodiments of the present technology. Any one of theforegoing memory devices described above with reference to FIGS. 1-7 canbe incorporated into any of a myriad of larger and/or more complexsystems, a representative example of which is system 880 shownschematically in FIG. 8. The system 880 can include a memory device 800,a power source 882, a driver 884, a processor 886, and/or othersubsystems or components 888. The memory device 800 can include featuresgenerally similar to those of the memory device described above withreference to FIGS. 1-7, and can therefore include various features forperforming a direct read request from a host device. The resultingsystem 880 can perform any of a wide variety of functions, such asmemory storage, data processing, and/or other suitable functions.Accordingly, representative systems 880 can include, without limitation,hand-held devices (e.g., mobile phones, tablets, digital readers, anddigital audio players), computers, vehicles, appliances and otherproducts. Components of the system 880 may be housed in a single unit ordistributed over multiple, interconnected units (e.g., through acommunications network). The components of the system 880 can alsoinclude remote devices and any of a wide variety of computer readablemedia.

From the foregoing, it will be appreciated that specific embodiments ofthe technology have been described herein for purposes of illustration,but that various modifications may be made without deviating from thedisclosure. In addition, certain aspects of the new technology describedin the context of particular embodiments may also be combined oreliminated in other embodiments. Moreover, although advantagesassociated with certain embodiments of the new technology have beendescribed in the context of those embodiments, other embodiments mayalso exhibit such advantages and not all embodiments need necessarilyexhibit such advantages to fall within the scope of the technology.Accordingly, the disclosure and associated technology can encompassother embodiments not expressly shown or described herein.

In the illustrated embodiments above, the memory devices have beendescribed in the context of devices incorporating DDR based DRAM. Memorydevices configured in accordance with other embodiments of the presenttechnology, however, can include other types of suitable storage mediain addition to or in lieu of DDR DRAMs, such as NAND or NOR-basedstorage media, non-volatile storage media, magnetic storage media,phase-change storage media, ferroelectric storage media, etc. Further,the various embodiments have been discussed in reference to the outputsignals. However, it is understood that the various embodiments can beimplemented in other ways where delays are relatively small, such ascircuits where multiple paths need to track closely to each other, DLLmultiple controls for read/ODT clocks, etc.

The term “processing” as used herein includes manipulating signals anddata, such as writing or programming, reading, erasing, refreshing,adjusting or changing values, calculating results, executinginstructions, assembling, transferring, and/or manipulating datastructures. The term data structures includes information arranged asbits, words or code-words, blocks, files, input data, system generateddata, such as calculated or generated data, and program data.

The above embodiments are described in sufficient detail to enable thoseskilled in the art to make and use the embodiments. A person skilled inthe relevant art, however, will understand that the technology may haveadditional embodiments and that the technology may be practiced withoutseveral of the details of the embodiments described above with referenceto FIGS. 1-7.

From the foregoing, it will be appreciated that specific embodiments ofthe technology have been described herein for purposes of illustration,but that various modifications may be made without deviating from thedisclosure. In addition, certain aspects of the new technology describedin the context of particular embodiments may also be combined oreliminated in other embodiments. Moreover, although advantagesassociated with certain embodiments of the new technology have beendescribed in the context of those embodiments, other embodiments mayalso exhibit such advantages and not all embodiments need necessarilyexhibit such advantages to fall within the scope of the technology.Accordingly, the disclosure and associated technology can encompassother embodiments not expressly shown or described herein.

We claim:
 1. An electronic device, comprising: a first circuit groupingincluding a first set of drivers, the first circuit grouping configuredto generate a first output signal corresponding to a first slew rate;and a second circuit grouping parallel to the first circuit grouping,the second circuit grouping including a second set of drivers, thesecond circuit grouping configured to generate a second output signalcorresponding to a second slew rate; and a first pre-driver circuitcoupled to the first circuit grouping and the second circuit grouping,the first pre-driver circuit configured to activate one or more driversfrom the first circuit grouping, the second circuit grouping, or acombination thereof to generate a set of output signals having at leastthe first slew rate and the second slew rate, wherein: the first set ofdrivers are configured with one or more physical characteristicsdifferent than those of the second set of drivers corresponding to adifference between the first and second slew rates.
 2. The electronicdevice of claim 1, wherein the one or more physical characteristicsinclude a driver size, a gate size, a gate loading amount, a capacitancevalue, or a combination thereof of drivers in the first and second setsof drivers.
 3. The electronic device of claim 1, further comprising: athird circuit grouping including a third set of drivers, the thirdcircuit grouping configured to generate a third output signalcorresponding to a third slew rate, wherein the third slew rate isbetween the first slew rate and the second slew rate, wherein: the firstcircuit grouping, the second circuit grouping, and the third circuitgrouping are configured to generate output signals corresponding tothree different phases corresponding to the different slew rates.
 4. Theelectronic device of claim 3, wherein the first circuit grouping, thesecond circuit grouping, and the third circuit grouping each include:the first pre-driver circuit configured to generate a set of datasignals for initially driving the output signals; a second pre-drivercircuit coupled to the first pre-driver circuit, the second pre-drivercircuit configured to route the set of data signals through a set ofcircuit legs for controlling the slew rates; and an output drivercircuit coupled to the second pre-driver circuit, the output driverconfigured to generate the output signals according to the set ofcircuit legs.
 5. The electronic device of claim 4, wherein: the secondpre-driver circuit includes a set of drivers corresponding to the firstslew rate, the second slew rate, and the third slew rate; and the firstpre-driver circuit configured to control on/off state of one or moredrivers in the set of drivers, wherein the first pre-driver circuitcontrols the on/off state to enable the set of circuit legs.
 6. Theelectronic device of claim 5, wherein the first pre-driver circuitincludes at least four drivers, wherein the at least four driversreceive and drive three input signals to generate four output datasignals.
 7. The electronic device of claim 6, wherein the firstpre-driver circuit includes a first driver, a second driver, a thirddriver, and a fourth driver parallel to each other, wherein the firstdriver and the second driver are configured to receive a first inputsignal, the third driver receives a second input signal, and the fourthdriver receives a third input signal.
 8. The electronic device of claim6, wherein two or more of the output data signals correspond to eachother.
 9. The electronic device of claim 4, wherein: the output drivercircuit includes a set of circuit paths corresponding to each circuitleg, the set of circuit paths configured to control a drive magnitude, aslew rate, or a combination thereof in the output signals; the secondpre-driver configured to control an on/off state of each circuit pathfor setting the drive magnitude, the slew rate, or the combinationthereof.
 10. The electronic device of claim 9, wherein the secondpre-driver and the output driver corresponds to at least six circuitlegs, wherein two of the circuit legs are associated with the first slewrate, two other circuit legs are associated with the second slew rate,and two other circuit legs are associated with the third slew rate. 11.The electronic device of claim 5, wherein: the first pre-driver circuitintroduces a first adjustment amount to a resulting slew rate; and thesecond pre-driver circuit and/or the output driver circuit introduces asecond adjustment amount to the resulting slew rate, wherein the secondadjustment amount is greater than the first adjustment amount.
 12. Theelectronic device of claim 1, wherein the electronic device comprises amemory device.
 13. The electronic device of claim 12, wherein the memorydevice is configured to implement a double data rate-4 (DDR4)interfacing scheme.
 14. A method of manufacturing an electronic device,the method comprising: forming a first circuit grouping configured togenerate a first output corresponding to a first slew rate, the firstcircuit grouping including a first set of drivers that correspond to afirst set of physical characteristics contributing to the first slewrate; and forming a second circuit grouping configured to generate asecond output corresponding to a second slew rate, the second circuitgrouping including a second set of drivers that correspond to a secondset of physical characteristics contributing to the second slew rate,wherein the second circuit grouping includes a combination of types ofelectronic components same as the first circuit grouping, and whereinthe second set of drivers is configured with one or more physicalcharacteristics different than those of the first set of driverscorresponding to a difference between the first and second slew rates.15. The method of claim 14, wherein the first and second sets ofphysical characteristics include driver/gate sizes, gate loadingamounts, capacitance values, or a combination thereof of drivers in thefirst and second sets of drivers.
 16. The method of claim 14, furthercomprising: forming a third circuit grouping configured to generate asecond output corresponding to a third slew rate, the third circuitgrouping including a third set of drivers that correspond to a third setof physical characteristics contributing to a third slew rate, whereinthe third slew rate is between the first slew rate and the second slewrate, wherein: forming the first circuit grouping, the second circuitgrouping, and the third circuit grouping forming circuits for generatingoutput signals having three different phases corresponding to thedifferent slew rates.
 17. The method of claim 16, wherein forming thefirst circuit grouping, the second circuit grouping, and the thirdcircuit grouping includes: forming a first pre-driver circuit configuredto generate a set of data signals for initially driving the outputsignals; forming a second pre-driver circuit coupled to the firstpre-driver circuit, the second pre-driver circuit configured to routethe set of data signals through a set of circuit legs for controllingthe slew rates; and forming an output driver circuit coupled to thesecond pre-driver circuit, the output driver configured to generate theoutput signals according to the set of circuit legs.
 18. The method ofclaim 17, wherein: forming the first pre-driver circuit includesproviding at least four drivers configured to process signals for thefirst, second, and third circuit groupings; forming the secondpre-driver circuit includes providing at least three sets of drivers,wherein: a first set of drivers are configured to process signals forthe first circuit groupings, a second set of drivers are configured toprocess signals for the second circuit groupings, and a third set ofdrivers are configured to process signals for the third circuitgroupings; and forming the output driver circuit includes providing atleast three sets of drivers corresponding to the driver sets of thesecond pre-driver circuit, wherein each set of the drivers in the outputdriver circuit includes a set of signal paths configured to provide adrive magnitude in the output signals.
 19. A method of operating anelectronic device, the method comprising: generating a first outputsignal using a first circuit grouping, wherein the first output signalcorresponds to a first slew rate that is associated with a firstphysical characteristic of the first circuit grouping; generating asecond output signal using a second circuit grouping, wherein the secondoutput signal corresponds to a second slew rate that is associated witha second physical characteristic of the second circuit grouping; andwherein: the first circuit grouping and the second circuit grouping bothincludes same combination of types of electronic components, the firstand second physical characteristics are different and correspond to adifference between the first and second slew rates, and the first andsecond physical characteristics include driver/gate sizes, gate loadingamounts, capacitance values, or a combination thereof.
 20. The method ofclaim 19, further comprising: selecting a first combination of driversto establish the first circuit grouping; selecting a second combinationof drivers to establish the second circuit grouping; wherein: generatingthe first output signal includes propagating a first input through theestablished first circuit grouping; and generating the second outputsignal includes propagating a second input through the establishedsecond circuit grouping.